FSJ9160D

June 1998 FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features 44A, -100V, rDS(ON) = 0.055Ω Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM Photo Current - 10.0nA Per-RAD(Si)/s Typically Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSJ9160D1 10K TXV FSJ9160D3 100K Commercial FSJ9160R1 100K TXV FSJ9160R3 100K Space FSJ9160R4 Formerly available as type TA17766. Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for c...