1N4007G DIODE Datasheet

1N4007G Datasheet, PDF, Equivalent


Part Number

1N4007G

Description

1.0A GLASS PASSIVATED STANDARD DIODE

Manufacture

WON-TOP

Total Page 4 Pages
Datasheet
Download 1N4007G Datasheet


1N4007G
®
WON-TOP ELECTRONICS
Features
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
1N4001G – 1N4007G
1.0A GLASS PASSIVATED STANDARD DIODE
Pb
AB
A
Mechanical Data
Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.35 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-41
Dim Min Max
A 25.4 —
B 4.06 5.21
C 0.71 0.864
D 2.00 2.72
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @TA = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
@IF = 1.0A
@TA = 25°C
@TA = 100°C
Typical Thermal Resistance Junction to Ambient (Note 1)
Typical Thermal Resistance Junction to Lead (Note 1)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
1N 1N 1N 1N 1N 1N 1N
4001G 4002G 4003G 4004G 4005G 4006G 4007G
Unit
50 100 200 400 600 800 1000 V
VR(RMS) 35 70 140 280 420 560 700 V
IO 1.0 A
IFSM
30 A
VFM
IRM
CJ
R JA
R JL
TJ, TSTG
1.0
5.0
50
8.0
50
25
-65 to +175
V
µA
pF
°C/W
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1

1N4007G
1N4001G – 1N4007G
1.0
10
®
WON-TOP ELECTRONICS
0.8
1.0
0.6
0.4
0.2
Resistive or
Inductive Load
0
0 20 40 60 80 100 120 140 160 180 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
30
Single Half-Sine-Wave
JEDEC Method
24
0.1
0.01
0
0.4 0.8 1.2 1.6 2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
1000
100
TA = 150°C
18 10 TA = 100°C
12 1.0
TA = 25°C
6 0.1
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
25
20
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
f = 1MHz
15
10
5
www.wontop.com
2
0
0.1
1 10
VR, DC REVERSE VOLTAGE (V)
Fig. 5 Typical Junction Capacitance
100
© Won-Top Electronics Co., Ltd.
Revision: September, 2012


Features ® WON-TOP ELECTRONICS Features  Glas s Passivated Die Construction  Low F orward Voltage Drop  High Current Ca pability  High Reliability  High Surge Current Capability 1N4001G – 1 N4007G 1.0A GLASS PASSIVATED STANDARD D IODE Pb AB A Mechanical Data  Cas e: DO-41, Molded Plastic  Terminals: Plated Leads Solderable per MIL-STD-20 2, Method 208  Polarity: Cathode Ban d  Weight: 0.35 grams (approx.)  Mounting Position: Any  Marking: Typ e Number  Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 D DO-41 Dim Mi n Max A 25.4 — B 4.06 5.21 C 0.71 0.8 64 D 2.00 2.72 All Dimensions in mm C Maximum Ratings and Electrical Charact eristics @TA=25°C unless otherwise spe cified Single Phase, half wave, 60Hz, r esistive or inductive load. For capacit ive load, derate current by 20%. Chara cteristic Peak Repetitive Reverse Volt age Working Peak Reverse Voltage DC Blo cking Voltage RMS Reverse Voltage Average Rectified Output Cu.
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