BCW60FF

BCW60, BCX70 NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW61, BCX71 (PNP) 3 2 1 VPS05161 Type BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCX70G BCX70H BCX70J BCX70K Marking AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 1 Jan-29-2002 BCW60, BCX70 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Peak base current Total power dissipation , TS = 71 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IBM Ptot Tj Tstg BCW60 32 32 5 BCW60FF BCX70 32 32 5 100 200 200 330 150 -65 ... 150 Unit V 45 45 5 mA mW °C Thermal Resistance Junction - soldering point 1) RthJS
240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 1For calculation of R thJA please refer to Application Note Thermal Resistance typ. V(BR)CEO 32 45 V(BR)CBO 32 45 V(BR)EBO 5 - BCW60/60FF BCX70 BCW60/...