BCW61

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW61 series PNP general purpose transistors Product specification Supersedes data of 1997 May 28 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistors FEATURES Low current (max. 100 mA) Low voltage (max. 32 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: BCW60. MARKING TYPE NUMBER BCW61B BCW61C BCW61D Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) BB∗ BC∗ BD∗ Top view handbook, halfpage BCW61 series PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −32 −32 −5 −100 −200 −100 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 12 2 Philips Semiconductors Product specification PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Trans...