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BCW61D Dataheets PDF



Part Number BCW61D
Manufacturers NXP
Logo NXP
Description PNP general purpose transistors
Datasheet BCW61D DatasheetBCW61D Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW61 series PNP general purpose transistors Product specification Supersedes data of 1997 May 28 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 32 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: BCW60. MARKING TYPE NUMBER BCW61B BCW61C BCW61D Note 1. ∗.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW61 series PNP general purpose transistors Product specification Supersedes data of 1997 May 28 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 32 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: BCW60. MARKING TYPE NUMBER BCW61B BCW61C BCW61D Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) BB∗ BC∗ BD∗ Top view handbook, halfpage BCW61 series PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −32 −32 −5 −100 −200 −100 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 12 2 Philips Semiconductors Product specification PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BCW61B BCW61C BCW61D DC current gain BCW61B BCW61C BCW61D DC current gain BCW61B BCW61C BCW61D VCEsat VBEsat VBE collector-emitter saturation voltage IC = −10 mA; IB = −0.25 mA IC = −50 mA; IB = −1.25 mA base-emitter saturation voltage base-emitter voltage IC = −10 mA; IB = −0.25 mA IC = −50 mA; IB = −1.25 mA IC = −2 mA; VCE = −5 V IC = −10 µA; VCE = −5 V IC = −50 mA; VCE = −1 V Cc Ce fT F Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector capacitance emitter capacitance transition frequency noise figure IE = ie = 0; VCB = −10 V; f = 1 MHz IC = ic = 0; VEB = −0.5 V; f = 1 MHz IC = −10 mA; VCE = −5 V; f = 100 MHz; note 1 IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz IC = −50 mA; VCE = −1 V 80 100 110 −60 −120 −600 −0.68 −600 − − − − 100 − IC = −2 mA; VCE = −5 V 180 250 380 CONDITIONS IE = 0; VCB = −32 V IE = 0; VCB = −32 V; Tamb = 150 °C IC = 0; VEB = −4 V IC = −10 µA; VCE = −5 V 30 40 100 MIN. − − − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 BCW61 series VALUE 500 UNIT K/W TYP. − − − − − − − − − − − − − − − − −650 −550 −720 4.5 11 − 2 MAX. −20 −20 −20 − − − 310 460 630 − − − −250 −550 −850 −1.05 −750 − − − − − 6 UNIT nA µA nA mV mV mV V mV mV mV pF pF MHz dB 1999 Apr 12 3 Philips Semiconductors Product specification PNP general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads BCW61 series SOT23 D B E A X HE v M A 3 Q A A1 1 e1 e bp 2 w M B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 12 4 Philips Semiconductors Product specification PNP general purpose transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BCW61 series This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 12 5 Philips Semiconductors Product specification PNP general purpose transistors NOTES BCW61 series 1999 Ap.


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