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1N5266B Dataheets PDF



Part Number 1N5266B
Manufacturers PAN JIT
Logo PAN JIT
Description SILICON ZENER DIODES
Datasheet 1N5266B Datasheet1N5266B Datasheet (PDF)

1N5221B~1N5266B SILICON ZENER DIODES VOLTAGE 2.4 to 68 Volt POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directive MECHANICAL DATA • Case: Molded Glass DO-35 • Terminals: Solderable per MIL-STD-750, Method 2026 • Polarity: See Diagram Below • Approx. Weight: 0.005 ounces, 0.13 grams • Ordering information: Suffix : “ -35 ” to order DO-35 Package • Packing info.

  1N5266B   1N5266B



Document
1N5221B~1N5266B SILICON ZENER DIODES VOLTAGE 2.4 to 68 Volt POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directive MECHANICAL DATA • Case: Molded Glass DO-35 • Terminals: Solderable per MIL-STD-750, Method 2026 • Polarity: See Diagram Below • Approx. Weight: 0.005 ounces, 0.13 grams • Ordering information: Suffix : “ -35 ” to order DO-35 Package • Packing information B - 2K per Bulk box T/R - 10K per 15" plastic Reel T/B - 5K per horiz. tape & Ammo box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Parameter Symbol Power Dissipation at TA= 25OC PTOT Junction Temperature TJ Storage Temperature Range TSTG Valid provided that leads at a distance of 8mm from case are kept at ambient temperature. Value 500 175 -65 to +175 Units mW OC OC Parameter Symbol Min. Thermal Resistance Junction to Ambient Air RθJA -- For.


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