current gain. BCW65 Datasheet


BCW65 gain. Datasheet pdf. Equivalent


BCW65


NPN Silicon AF Transistors (For general AF applications High current gain)
NPN Silicon AF Transistors

BCW 65 BCW 66

For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 67, BCW 68 (PNP)
q

Type BCW 65 A BCW 65 B BCW 65 C BCW 66 F BCW 66 G BCW 66 H

Marking EAs EBs ECs EFs EGs EHs

Ordering Code (tape and reel) Q62702-C1516 Q62702-C1612 Q62702-C1479 Q62702-C1892 Q62702-C1526 Q62702-C1632

Pin Configuration 1 2 3 B E C

Package1) SOT-23

1)

For detailed information see chapter Package Outlines.

Semiconductor Group

1

5.91

BCW 65 BCW 66

Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS
≤ ≤

Symbol BCW 65 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 32 60 5

Values BCW 66 45 75 5 800 1 100 200 330 150 – 65 … + 150

Unit V

mA A mA mW ˚C

285 215

K/W

1)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group

2

BCW 65 BCW 66

Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 65 BCW 66 Collector-base breakdown voltage IC = 10 µA BCW 65 BCW 66 Emitter-base breakdown voltage...



BCW65
NPN Silicon AF Transistors
q For general AF applications
q High current gain
q Low collector-emitter saturation voltage
q Complementary types: BCW 67, BCW 68 (PNP)
BCW 65
BCW 66
Type
BCW 65 A
BCW 65 B
BCW 65 C
BCW 66 F
BCW 66 G
BCW 66 H
Marking
EAs
EBs
ECs
EFs
EGs
EHs
Ordering Code
(tape and reel)
Q62702-C1516
Q62702-C1612
Q62702-C1479
Q62702-C1892
Q62702-C1526
Q62702-C1632
Pin Configuration
123
BEC
Package1)
SOT-23
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91

BCW65
BCW 65
BCW 66
Maximum Ratings
Parameter
Symbol
BCW 65
Values
BCW 66
Collector-emitter voltage
VCE0
Collector-base voltage
VCB0
Emitter-base voltage
VEB0
Collector current
IC
Peak collector current
ICM
Base current
IB
Peak base current
IBM
Total power dissipation, TS = 79 ˚C Ptot
Junction temperature
Tj
Storage temperature range
Tstg
32
60
5
45
75
5
800
1
100
200
330
150
– 65 … + 150
Thermal Resistance
Junction - ambient1)
Junction - soldering point
Rth JA
Rth JS
285
215
Unit
V
mA
A
mA
mW
˚C
K/W
1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2




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