BCW66G

BCW65, BCW66 NPN Silicon AF Transistor
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW67, BCW68 (PNP) 3 2 1 VPS05161 Type BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H Maximum Ratings Parameter Marking EAs EBs ECs EFs EGs EHs 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 Symbol VCEO VCBO VEBO BCW65 32 60 5 800 1 100 200 330 150 BCW66 45 75 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg mA A mA mW °C -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS
215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-10-2001 BCW65, BCW66 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 Collector cutoff current VCB = 32 V, IE = 0 , TA = 150 °C VCB = 45 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 10 V hFE -grp.A/F h...