SILICON RECTIFIER DIODES
www.eicsemi.com
1S1885 ~ 1S1888
PRV : 100 ~ 600 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge...
Description
www.eicsemi.com
1S1885 ~ 1S1888
PRV : 100 ~ 600 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-15 Molded plastic * Epoxy : UL94V-0 rate flame retardant * Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.4 gram
SILICON RECTIFIER DIODES DO-15
0.142 (3.6) 0.102 (2.6)
0.034 (0.86) 0.028 (0.71)
1.00 (25.4) MIN.
0.300 (7.6) 0.230 (5.8)
1.00 (25.4) MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL 1S1885 1S1886 1S1887 1S1888
Maximum Repetitive Peak Reverse Voltage Maximum Average Forward Current Ta = 65 °C Maximum Peak One Cycle Surge Forward Current (Non-repetitive)
VRRM
100
200
400
600
IF
1.0
IFSM
60 (50Hz) 66 (60Hz)
Maximum Forward Voltage at IF = 1.5 A. Maximum Repetitive Peak Reverse Current (VRRM = Rated) Maximum Thermal Resistance (Junction to Ambient) Junction Temperature Range Storage Temperature Range
VF IR IR(H) Rth (j-a) TJ TSTG
1.2 10 400 (Tj = 150 °C) 100 - 40 to + 150 - 40 to + 150
UNIT V A
A
V
µA
°C/W °C °C
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Rev. 03 : February 28, 2014
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