BCW69 BCW70
SMALL SIGNAL PNP TRANSISTORS
Type BCW 69 BCW 70
s
Marking H1 H2
s
s
SILICON EPITAXIAL PLANAR PNP TRANSIS...
BCW69 BCW70
SMALL SIGNAL
PNP TRANSISTORS
Type BCW 69 BCW 70
s
Marking H1 H2
s
s
SILICON EPITAXIAL PLANAR
PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING
2 3 1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V CBO V EBO IC I CM P t ot T stg Tj March 1996 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Collector-Base Voltage (IE = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature
o
Value -50 -45 -50 -5 -0.1 -0.2 300 -65 to 150 150
Unit V V V V A A mW
o o
C C 1/4
BCW69/BCW70
THERMAL DATA
R t hj- amb Thermal Resistance Junction-Ambient Max 420
o
C/W
Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CB = -20 V V CB = -20 V I C = -10 µ A T j = 100 C -50
o
Min.
Typ .
Max. -100 -10
Un it nA µA V
V (BR)CES ∗ Collector-Emitter Breakdown Voltage (V BE = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter O n Voltage DC Current G ain
I C = -2 mA
-45
V
I C ...