BCX19LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCX17LT1/D General Purpose Transistors COLLECTOR 3 1 BASE 2 EMITTER COLLECTOR 3 1 BASE 2 EMITTER PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 Voltage and current are negative for PNP transistors 3 MAXIMUM RATINGS Value Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BCX17LT1 BCX19LT1 45 50 5.0 500 BCX18LT1 BCX20LT1 25 30 Unit Vdc Vdc Vdc mAdc 1 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING BCX17LT1 = T1; BCX18LT1 = T2; BCX19LT1 = U1; BCX20LT1 = U2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C Thermal Clad is a trademark of the Bergquist Company Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector–Emitter Bre...