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BCX52 Dataheets PDF



Part Number BCX52
Manufacturers NXP
Logo NXP
Description PNP medium power transistors
Datasheet BCX52 DatasheetBCX52 Datasheet (PDF)

BCP52; BCX52; BC52PA 60 V, 1 A PNP medium power transistors Rev. 9 — 18 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package NXP BCP52 SOT223 BCX52 SOT89 BC52PA SOT1061 JEITA SC-73 SC-62 - [1] Valid for all available selection groups. JEDEC TO-243 - NPN complement BCP55 BCX55 BC55PA 1.2 Features and benefits  High current .

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BCP52; BCX52; BC52PA 60 V, 1 A PNP medium power transistors Rev. 9 — 18 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package NXP BCP52 SOT223 BCX52 SOT89 BC52PA SOT1061 JEITA SC-73 SC-62 - [1] Valid for all available selection groups. JEDEC TO-243 - NPN complement BCP55 BCX55 BC55PA 1.2 Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified 1.3 Applications  Linear voltage regulators  High-side switches  Battery-driven devices  Power management  MOSFET drivers  Amplifiers 1.4 Quick reference data Table 2. Symbol VCEO IC ICM Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current single pulse; tp  1 ms Min Typ Max Unit - - 60 V - - 1 A - - 2 A NXP Semiconductors BCP52; BCX52; BC52PA 60 V, 1 A PNP medium power transistors Table 2. Symbol hFE Quick reference data …continued Parameter Conditions DC current gain hFE selection -10 hFE selection -16 VCE = 2 V; IC = 150 mA VCE = 2 V; IC = 150 mA VCE = 2 V; IC = 150 mA Min Typ Max Unit 63 - 250 63 - 160 100 - 250 2. Pinning information Table 3. Pin SOT223 1 2 3 4 Pinning Description base collector emitter collector SOT89 1 2 3 emitter collector base SOT1061 1 2 3 base emitter collector Simplified outline Graphic symbol 4 123 2, 4 1 3 sym028 321 2 3 1 006aaa231 3 12 Transparent top view 3 1 2 sym013 BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 2 of 22 NXP Semiconductors BCP52; BCX52; BC52PA 60 V, 1 A PNP medium power transistors 3. Ordering information 4. Marking Table 4. Ordering information Type number[1] Package Name Description BCP52 SC-73 plastic surface-mounted package with increased heatsink; 4 leads BCX52 SC-62 plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads BC52PA HUSON3 plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2  2  0.65 mm [1] Valid for all available selection groups. Version SOT223 SOT89 SOT1061 Table 5. Marking codes Type number BCP52 BCP52-10 BCP52-16 BCX52 BCX52-10 BCX52-16 BC52PA BC52-10PA BC52-16PA Marking code BCP52 BCP52/10 BCP52/16 AE AG AM BS BT BU BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 3 of 22 NXP Semiconductors BCP52; BCX52; BC52PA 60 V, 1 A PNP medium power transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min VCBO VCEO VEBO IC ICM IB IBM Ptot collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current peak base current total power dissipation BCP52 open emitter open base open collector single pulse; tp  1 ms single pulse; tp  1 ms Tamb  25 C - - [1] - [2] - [3] - BCX52 [1] - [2] - [3] - BC52PA [1] - [2] - [3] - [4] - [5] - Tj Tamb Tstg junction temperature ambient temperature storage temperature 55 65 Max Unit 60 V 60 V 5 V 1 A 2 A 0.3 A 0.3 A 0.65 1.00 1.35 0.50 0.95 1.35 0.42 0.83 1.10 0.81 1.65 150 +150 +150 W W W W W W W W W W W C C C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2. BCP52_BCX52_BC52PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 9 — 18 October 2011 © NXP B.V. 2011. All rights reserved. 4 of 22 NXP Semiconductors BCP52; BCX52; BC52PA 60 V, 1 A PNP medium power transistors 1.5 Ptot (W) 1.0 0.5 (1) (2) (3) 006aac674 1.5 Ptot (W) 1.0 (1) (2) (3) 0.5 006aac675 0.0 –75 –25 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 6 cm2 (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves SOT223 2.0 Ptot (W) 1.5 1.0 0.5 (1) (2) (3) (4) (5) 0.0 –75 –25 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 6 cm2 (2) FR4 PCB, mounting pad for collector .


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