BCX68

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 – FEBRUARY 1995 7 FEATURES * High gain and low saturation voltages COMPLEMENTARY TYPE – PARTMARKING DETAIL – BCX69 BCX68 – CE BCX68-16 – CC BCX68-25 – CD BCX68 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 25 20 5 2 1 1 -65 to +150 UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(on) 50 85 60 BCX68-16 100 BCX68-25 160 fT C obo 100 25 h FE MIN. 25 20 5 0.1 10 10 0.5 1.0 TYP. MAX. UNIT V V V µA µA µA V V CONDITIONS. I C =100 µ A I C =10mA I E =100 µ A V CB =25V V CB =25V, T a =150°C V EB =5V I C =1A, I B =100mA* I C =1A, V CE =1V* IC IC IC IC IC MHz pF =5mA, V CE =10V =500mA, V CE =1V =1A, V CE =1V* =500mA, V CE =1V* =500mA, V CE =1V 375 250 250 400 Transition Frequency Output Capacitance I C =100mA, V CE =5V, f=100MHz V CB =10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For ...