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DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D088
BCX70 series NPN general purpose transistors
Product specification Supersedes data of 1997 Mar 14 1999 Apr 15
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BCX71 series. MARKING TYPE NUMBER BCX70G BCX70H BCX70J BCX70K Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) AG∗ AH∗ AJ∗ AK∗
Top view
handbook, halfpage
BCX70 series
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1 2
1
2
MAM255
Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 45 45 5 100 200 200 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 15 2 PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 UNIT K/W
Philips Semiconductors
Product specification
NPN general purpose transistors
CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BCX70G BCX70H BCX70J BCX70K DC current gain BCX70G BCX70H BCX70J BCX70K DC current gain BCX70G BCX70H BCX70J BCX70K VCEsat VBEsat VBE collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage IC = 10 mA; IB = 0.25 mA IC = 50 mA; IB = 1.25 mA IC = 10 mA; IB = 0.25 mA IC = 50 mA; IB = 1.25 mA IC = 10 µA; VCE = 5 V IC = 2 mA; VCE = 5 V IC = 50 mA; VCE = 1 V Cc Ce fT F Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector capacitance emitter capacitance transition frequency noise figure IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 50 mA; VCE = 1 V 50 70 90 100 50 100 600 700 − 550 − − − IC = 2 mA; VCE = 5 V 120 180 250 380 CONDITIONS IE = 0; VCB = 45 V IE = 0; VCB = 45 V; Tamb = 150 °C IC = 0; VEB = 4 V IC = 10 µA; VCE = 5 V − 40 30 100 MIN. − − −
BCX70 series
TYP. − − − − − − − − − − − − − − − − − − − 520 650 780 1.7 11 250 2
MAX. 20 20 20 − − − − 220 310 460 630 − − − − 350 550 850 1050 − 750 − − − − 6
UNIT nA µA nA
mV mV mV mV mV mV mV pF pF MHz dB
IC = 10 mA; VCE = 5 V; f = 100 MHz; 100 note 1 IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz −
1999 Apr 15
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Philips Semiconductors
Product specification
NPN general purpose transistors
PACKAGE OUTLINE Plastic surface mou.