Document
BCW60, BCX70
NPN Silicon AF Transistors
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP)
3
2 1
VPS05161
Type BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCX70G BCX70H BCX70J BCX70K
Marking AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23
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Jan-29-2002
BCW60, BCX70
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Peak base current Total power dissipation , TS = 71 °C Junction temperature Storage temperature
Symbol VCEO VCBO VEBO
IC ICM IBM Ptot Tj Tstg
BCW60 32 32 5
BCW60FF BCX70 32 32 5
100 200 200 330 150 -65 ... 150
Unit V
45 45 5
mA
mW °C
Thermal Resistance Junction - soldering point 1) RthJS
240
K/W
Unit max. V
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0
1For calculation of R thJA please refer to Application Note Thermal Resistance
typ.
V(BR)CEO 32 45 V(BR)CBO 32 45 V(BR)EBO 5 -
BCW60/60FF BCX70
BCW60/60FF BCX70
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Jan-29-2002
BCW60, BCX70
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. AC Characteristics Collector cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 Collector cutoff current VCB = 32 V, IE = 0 , TA = 150 °C BCW60 / 60FF VCB = 45 V, IE = 0 , TA = 150 °C BCX70 Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 10 µA, VCE = 5 V
hFE-grp. A/ G hFE-grp. B/ H hFE-grp. C/ J/ FF hFE-grp. D/ K/ FN BCW60 /60FF BCX70
Unit max. nA
typ.
ICBO ICBO IEBO hFE 20 20 40 100 hFE
hFE-grp. A/ G hFE-grp. B/ H hFE-grp. C/ J/ FF hFE-grp. D/ K/ FN
-
20 20 µA 20 20 20 nA -
-
140 200 300 460 170 250 350 500 -
220 310 460 630 -
DC current gain 1) IC = 2 mA, VCE = 5 V
120 180 250 380 hFE 50 70 90 100
DC current gain 1) IC = 50 mA, VCE = 1 V
hFE-grp. A/ G hFE-grp. B/ H hFE-grp. C/ J/ FF hFE-grp. D/ K/ FN
1) Pulse test: t ≤=300µs, D = 2%
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Jan-29-2002
BCW60, BCX70
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-emitter voltage 1) IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 50 mA, VCE = 1 V
AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-grp. A/G B/H C / J / FF D / K / FN
Symbol min. VCEsat VBEsat VBE(ON) 0.55 -
Values typ. max.
Unit
V 0.12 0.2 0.7 0.83 0.52 0.65 0.78 0.25 0.55 0.85 1.05 0.75 -
fT Ccb Ceb h11e
-
250 3 8
-
MHz pF
k 2.7 3.6 4.5 7.5 1.5 2 2 3 10-4 -
Open-circuit reverse voltage transf.ratio | hFE-grp. h12e IC = 2 mA, VCE = 5 V, f = 1 kHz A/G
B/H C / J/FF D / K / FN
1) Pulse test: t ≤=300µs, D = 2%
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Jan-29-2002
BCW60, BCX70
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics Short-circuit forward current transf.ratio | hFE-grp. h21e IC = 2 mA, VCE = 5 V, f = 1 kHz A/G
B/H C / J/ FF D / K / FN
Unit max.
typ.
200 260 330 520 18 24 30 50 -
Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-grp. A/G B/H C / J / FF D / K / FN
h22e
S
dB 2 1 2 0.135 µV
Noise figure IC = 100 µA, VCE = 5 V, RS = 1 k, f = 1 kHz, f = 200 Hz Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k, f = 10 ... 50 Hz
hFE-grp. A-K FF - FN hFE-grp. FF / FN
F
Vn
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Jan-29-2002
BCW60, BCX70
Total power dissipation Ptot = f(TS)
Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO)
BCW 60/BCX 70 EHP00327
360
mW
300 270
12 CCBO pF (C EBO) 10
P tot
240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120
8
CEBO
6
4
CCBO
2
°C 150 TS
0 10 -1
10 0
V 10 1 V CBO (V EBO )
Permissible pulse load Ptotmax / PtotDC = f (tp )
10 3 Ptot max 5 Ptot DC
BCW 60/BCX 70 EHP00328
Transition frequency fT = f (IC) VCE = 5V
BCW 60/BCX 70 EHP00330
10 3 MHz fT
D=
tp T
tp T
10 2 5
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2
5
10 0 10 -6
10
-5
10
-4
10
-3
10
-2
s tp
10
0
10 1 10 -1
10 0
10 1
mA
10 2
ΙC
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Jan-29-2002
BCW60, BCX70
Base-emitter saturation voltage IC = f (VBEsat ), hFE = 40
BCW 60/BCX 70 EHP00331
Collector-emitter saturation voltage IC = f (VCEsat), h FE = 40
10 2
BCW 60/BCX 70 EHP00332
10 .