DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D088
BCX70 series NPN general purpose transistors
Product specificat...
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D088
BCX70 series
NPN general purpose
transistors
Product specification Supersedes data of 1997 Mar 14 1999 Apr 15
Philips Semiconductors
Product specification
NPN general purpose
transistors
FEATURES Low current (max. 100 mA) Low voltage (max. 45 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCX71 series. MARKING TYPE NUMBER BCX70G BCX70H BCX70J BCX70K Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) AG∗ AH∗ AJ∗ AK∗
Top view
handbook, halfpage
BCX70 series
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1 2
1
2
MAM255
Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 45 45 5 100 200 200 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board. 1999 Apr 15 2 PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 UNIT K...