(PDF) 2N3904 Datasheet PDF | HOTTECH





2N3904 Datasheet PDF

Part Number 2N3904
Description GENERAL PURPOSE TRANSISTOR
Manufacture HOTTECH
Total Page 4 Pages
PDF Download Download 2N3904 Datasheet PDF

Features: Datasheet pdf REPLACEMENT TYPE : 2N3904 FEATURES  NPN silicon epitaxial planar transistor for switching and Amplifier applicatio ns  As complementary type, the PNP t ransistor HCN3906 is Recommended  Th is transistor is also available in the SOT-23 case with the type designation H ABT3904 MAXIMUM RATINGS (TA=25°C unle ss otherwise noted) Parameter Symbol Value Collector-Base Voltage V CBO 6 0 Collector-Emitter Voltage V CEO 40 Emitter-Base Voltage V EBO 6 Colle ctor Current-Continuous IC 0.2 Collect or Power Dissipation PC 0.625 Junctio n Temperature TJ 150 Storage Temperat ure Tstg -55 -150 Unit V V V A W °C °C HCN3904(NPN) GENERAL PURPOSE TRANS ISTOR TO-92 1:EMITTER 2:BASE 3:COLLECTO R ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Sy mbol Test conditions Collector-Base Br eakdown Voltage V CBO IC=10μA, IE=0 Collector-Emitter Breakdown Voltage VC EO IC=1mA, IB=0 Emitter-Base Breakdow n Voltage V EBO IE=10μA , IC=0 Collector Cut-off Current I.

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2N3904 datasheet
REPLACEMENT TYPE : 2N3904
FEATURES
NPN silicon epitaxial planar transistor for switching and Amplifier applications
As complementary type, the PNP transistor HCN3906 is Recommended
This transistor is also available in the SOT-23 case with the type
designation HABT3904
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol Value
Collector-Base Voltage
V CBO
60
Collector-Emitter Voltage
V CEO
40
Emitter-Base Voltage
V EBO
6
Collector Current-Continuous IC 0.2
Collector Power Dissipation
PC 0.625
Junction Temperature
TJ 150
Storage Temperature
Tstg -55 -150
Unit
V
V
V
A
W
°C
°C
HCN3904(NPN)
GENERAL PURPOSE TRANSISTOR
TO-92
1:EMITTER 2:BASE 3:COLLECTOR
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collector-Base Breakdown Voltage
V CBO
IC=10μA, IE=0
Collector-Emitter Breakdown Voltage VCEO
IC=1mA, IB=0
Emitter-Base Breakdown Voltage
V EBO
IE=10μA , IC=0
Collector Cut-off Current
I CBO
VCB=60V , IE=0
Collector cut-off current
I CEO
VCE= 40V, IB=0
Emitter Cut-off Current
I EBO
VEB=5V , IC=0
h FE(1)
VCE=1V , IC=10mA
DC Current Gain
h FE(2)
VCE=1V, IC=50
h FE(3)
VCE=1V , IC=100mA
Collector-Emitter Saturation Voltage
V CE(sat)
IC=50mA , IB=5mA
Base-Emitter Saturation Voltage
V BE(sat)
IC=50mA , IB=5mA
Transition frequency
fT VCE=20V,IC=10mA,
Delay Time
td VCC=3V,VBE=0.5V,
Rise Time
tr IC=10mA,IB1=1mA
Storage Time
ts VCC=3V, IC=10mA
Fall Time
tf IB1=IB2=1mA
CLASSIFICATION OF hFE
Rank
Range
O
100-200
Y
200-300
Min Typ Max Unit
60 V
40 V
6V
0.1 μA
0.1 μA
0.1 μA
100 400
60
30
0.3 V
0.95 V
300 MHz
35 ns
35 ns
200 ns
50 ns
G
300-400
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com
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2N3904 datasheet
Typical Characteristics
HCN3904(NPN)
GENERAL PURPOSE TRANSISTOR
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com
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