(PDF) 2N3904 Datasheet PDF | Multicomp





2N3904 Datasheet PDF

Part Number 2N3904
Description General Purpose Transistors
Manufacture Multicomp
Total Page 4 Pages
PDF Download Download 2N3904 Datasheet PDF

Features: Datasheet pdf 2N3904 General Purpose Transistors NPN T O-92 High Speed Switching Features: NPN Silicon Planar Switching Transis tors. • Fast switching devices exhibi ting short turn-off and low saturation voltage characteristics. • General pu rpose Switching and Amplifier Applicati ons. TO-92 Plastic Package Dimensions A B C D E F G H K Minimum 4.32 4.45 3 .18 0.41 0.35 1.14 12.70 Maximum 5.33 5.20 4.19 0.55 0.50 5° 1.40 1.53 Dimen sions : Millimetres Pin Configuration 1. Collector 2. Base 3. Emitter Page 1 31/05/05 V1.0 2N3904 General Purpose Transistors NPN TO-92 Absolute Maximu m Ratings Description Collector-Emitter Voltage Collector-Base Voltage Emitter -Base Voltage Collector Current Continu ous Power Dissipation at Ta = 25°C Der ate above 25°C Power Dissipation at Tc = 25°C Derate above 25°C Operating an d Storage JunctionTemperature Range The rmal Resistance Junction to Case Juncti on to Ambient Symbol VCEO VCBO VEBO IC PD PD Tj, Tstg Rth(j-c) Rth(j-a) Value 40 60 6.0 200 625 5.0 .

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2N3904 datasheet
2N3904
General Purpose Transistors NPN TO-92
High Speed Switching
Features:
NPN Silicon Planar Switching Transistors.
Fast switching devices exhibiting short turn-off and low saturation voltage characteristics.
General purpose Switching and Amplifier Applications.
TO-92 Plastic Package
Dimensions
A
B
C
D
E
F
G
H
K
Minimum
4.32
4.45
3.18
0.41
0.35
1.14
12.70
Maximum
5.33
5.20
4.19
0.55
0.50
1.40
1.53
Dimensions : Millimetres
Pin Configuration
1. Collector
2. Base
3. Emitter
Page 1
31/05/05 V1.0

2N3904 datasheet
2N3904
General Purpose Transistors NPN TO-92
Absolute Maximum Ratings
Description
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Power Dissipation at Ta = 25°C
Derate above 25°C
Power Dissipation at Tc= 25°C
Derate above 25°C
Operating and Storage
JunctionTemperature Range
Thermal Resistance
Junction to Case
Junction to Ambient
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
Rth(j-c)
Rth(j-a)
Value
40
60
6.0
200
625
5.0
1.5
12
-55 to +150
83.3
200
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Description
Symbol
Test Condition
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Cutoff Current
Base Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
*VCEO
VCBO
VEBO
ICEX
IBL
*hFE
*VCE(sat)
*VBE(sat)
IC = 10mA, IB = 0
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCE = 30V, VEB = 3V
IC = 0.1mA, VCE = 1V
IC = 1mA, VCE = 1V
IC = 10mA, VCE = 1V
IC = 50mA, VCE = 1V
IC = 100mA, VCE = 1V
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
Unit
V
mA
mW
mW/°C
W
mW/°C
°C
°C/W
2N3904
>40
>60
>6.0
<50
<50
>40
>70
100 -300
>60
>30
<0.20
<0.30
0.65 - 0.85
<0.95
Unit
V
nA
-
V
V
Page 2
31/05/05 V1.0





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