NPN Transistor. 2N3904 Datasheet

2N3904 Transistor. Datasheet pdf. Equivalent

2N3904 Datasheet
Recommendation 2N3904 Datasheet
Part 2N3904
Description Silicon NPN Transistor
Feature 2N3904; 2N3904 Silicon NPN Transistor General Purpose TO−92 Type Package Absolute Maximum Ratings: Collect.
Manufacture NTE
Datasheet
Download 2N3904 Datasheet




NTE 2N3904
2N3904
Silicon NPN Transistor
General Purpose
TO92 Type Package
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
CollectorBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total
DDeveircaeteDAisbsoipvaeti2o5n(CTA.
=
..
+25C),
.......
.P.D.
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. . 625mW
2.8mW/C
Total
DDeveircaeteDAisbsoipvaeti2o5n(CTC.
=
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.+.2.5..C.).,.P. D. .
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. . . . 1.5W
12mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W
Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
CollectorBase Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON Characteristics (Note 1)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
IBL
IC = 1mA, IB = 0, Note 1
IC = 10A, IE = 0
IE = 10A, IC = 0
VCE = 30V, VEB = 3V
VCE = 30V, VEB = 3V
DC Current Gain
hFE VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 50mA
VCE = 1V, IC = 100mA
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Min Typ Max Unit
40 − −
60 − −
6−−
− − 50
− − 50
V
V
V
nA
nA
40 − −
70 − −
100 300
60 − −
30 − −



NTE 2N3904
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Cont’d) (Note 1)
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
SmallSignal Characteristics
VCE(sat)
VBE(sat)
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
− − 0.2
− − 0.3
0.65 0.85
− − 0.95
V
V
V
V
Current GainBandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
SmallSignal Current Gain
Output Admittance
Noise Figure
fT IC = 10mA, VCE = 20V, f = 100MHz 300 − − MHz
Cobo VCB = 5V, IE = 0, f = 1MHz
− − 4.0 pF
Cibo VCB = 0.5V, IC = 0, f = 1MHz
− − 8.0 pF
hie IC = 1mA, VCE = 10V, f = 1kHz
1.0 10 k
hre IC = 1mA, VCE = 10V, f = 1kHz
0.5 8.0 x 104
hfe IC = 1mA, VCE = 10V, f = 1kHz
100 400
hoe IC = 1mA, VCE = 10V, f = 1kHz
1.0 30 mhos
NF IfC==101H00ztAo,1V5C.7Ek=Hz5V, RS = 1k,
− − 5.0 db
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
VIBC1C==1m3VA, VEB = 0.5V, IC = 10mA,
ts
tf
VIBC1C==IB32V=, I1Cm=A10mA,
− − 35 ns
− − 35 ns
− − 200 ns
− − 50 ns
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.



NTE 2N3904
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
EBC
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165
(4.2)
Max
.105 (2.67) Max







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