MMBT4401

REPLACEMENT TYPE :MMBT4401 FEATURES  Switching Transistor HABT4401(NPN) SWITCHING TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 60 Collector-Emitter Voltage VCEO 40 Emitter-Base Voltage VEBO 6 Collector Current-Continuous IC 600 Collector Power Dissipation PC 300 Thermal Resistance Junction to Ambient RθJA 417 Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 Unit V V V mA mW °C/W °C °C ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage VCBO IC=100μA ,IE=0 Collector-Emitter Breakdown Voltage VCEO IC=1mA ,IB=0 Emitter-Base Breakdown Voltage VEBO IE=100μA,IC=0 Collector Cut-off current ICEX VCE=35V,VEB(off)=0.4V Collector Cut-off Current ICBO VCB=50V,IE=0 Emitter Cut-off Current IEBO VEB=5V,IC=0 hFE(1) VCE=1V,IC=0.1mA hFE(2) VCE=1V,IC=1mA DC Current Gain hFE(3) VCE=1V,IC=...