HABT3906

HABT3906(PNP) REPLACEMENT TYPE :MMBT3906 SWITCHING TRANSISTOR FEATURES  PNP Silicon Epitaxial Planar Transistor  for switching and amplifier applications.  Complement to HABT3904(NPN) MAXIMU MRATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -6 Collector Current-Continuous IC -200 Collector Power Dissipation IC 200 Thermal Resistance Junction to Ambient RθJA 625 Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 Unit V V V mA mW °C °C °C SOT-23 MARKING : 2A 1: BASE 2：EMITTER 3: COLLECTO ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage VCBO IC= -10mA , IE=0 Collector-Emitter Breakdown Voltage VCEO IC= -1mA , IB=0 Emitter-Base Breakdown Voltage VEBO IE=-10μA , IC=0 Collector Cut-off Current ICBO VCB=-60V , IE=0 Collector Cut-off C...