Document
HABT3906(PNP)
REPLACEMENT TYPE :MMBT3906
SWITCHING TRANSISTOR
FEATURES PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Complement to HABT3904(NPN)
MAXIMU MRATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Collector-Base Voltage
VCBO
-40
Collector-Emitter Voltage
VCEO
-40
Emitter-Base Voltage
VEBO
-6
Collector Current-Continuous IC -200
Collector Power Dissipation
IC 200
Thermal Resistance Junction to Ambient RθJA
625
Junction Temperature
TJ 150
Storage Temperature
Tstg -55 to +150
Unit V V V mA
mW °C °C °C
SOT-23 MARKING : 2A 1: BASE 2:EMITTER 3: COLLECTO
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collector-Base Breakdown Voltage
VCBO
IC= -10mA , IE=0
Collector-Emitter Breakdown Voltage
VCEO
IC= -1mA , IB=0
Emitter-Base Breakdown Voltage
VEBO
IE=-10μA , IC=0
Collector Cut-off Current
ICBO
VCB=-60V , IE=0
Collector Cut-off C.