HABTA92

REPLACEMENT TYPE : MMBTA92 FEATURES  High Breakdown Voltage  Complement to HABTA42(NPN) HABTA92(PNP) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC -500 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 °C Storage Temperature Tstg -55 to +150 °C SOT-23 MARKING:2D 1: BASE 2：EMITTER 3: COLLECTO ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage VCBO IC=-100μA , IE=0 Collector-Emitter Breakdown Voltage VCEO IC=-1mA , IB=0 Emitter-Base Breakdown Voltage VEBO IE=-100μA , IC=0 Collector Cut-off Current ICBO VCB=-200V , IE=0 Emitter Cut-off Current IEBO VEB=-5V , IC=0 hFE(1) VCE=-10V , IC=-1mA DC Current Gain hFE(2) VCE=-10V , IC=-10mA hFE(3) VCE=-...