REPLACEMENT TYPE : MMBTA92
FEATURES High Breakdown Voltage Complement to HABTA42(NPN)
HABTA92(PNP)
GENERAL PURPOSE ...
REPLACEMENT TYPE : MMBTA92
FEATURES High Breakdown Voltage Complement to HABTA42(
NPN)
HABTA92(
PNP)
GENERAL PURPOSE
TRANSISTOR
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Collector-Base Voltage
VCBO
-300
V
Collector-Emitter Voltage
VCEO
-300
V
Emitter-Base Voltage
VEBO
-5 V
Collector Current-Continuous
IC
-500
mA
Collector Power Dissipation
PC 300 mW
Junction Temperature
TJ 150 °C
Storage Temperature
Tstg -55 to +150 °C
SOT-23 MARKING:2D 1: BASE 2:EMITTER 3: COLLECTO
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collector-Base Breakdown Voltage
VCBO
IC=-100μA , IE=0
Collector-Emitter Breakdown Voltage
VCEO
IC=-1mA , IB=0
Emitter-Base Breakdown Voltage
VEBO
IE=-100μA , IC=0
Collector Cut-off Current
ICBO VCB=-200V , IE=0
Emitter Cut-off Current
IEBO VEB=-5V , IC=0
hFE(1)
VCE=-10V , IC=-1mA
DC Current Gain
hFE(2)
VCE=-10V , IC=-10mA
hFE(3)
VCE=-...