HABTH10

REPLACEMENT TYPE : MMBTH10 FEATURES  VHF/UHF Transistor HABTH10(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 30 Collector-Emitter Voltage VCEO 25 Emitter-Base Voltage VEBO 3 Collector Current-Continuous IC 50 Collector Power Dissipation PC 225 Thermal Resistance Junction to Ambient RθJA Junction Temperature TJ 556 150 Storage Temperature Tstg -55~+150 Unit V V V mA mW °C/W °C °C SOT-23 MARKING:3GM 1: BASE 2:EMITTER 3: COLLECTOR ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage VCBO IC=100μA,IE=0 Collector-Emitter Breakdown Voltage VCEO IC=1mA,IB=0 Emitter-Base Breakdown Voltage VEBO IE=10uA,IC=0 Collector Cut-off Current ICBO VCB=25V,IE=0 Emitter Cut-off Current IEBO VEB=2V,IC=0 DC Current Gain hFE VCE=10V,IC=1mA Collector-Emitter Saturation Voltage VCE(sat) IC=4mA...