BCY78

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BCY78; BCY79 PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 18 Philips Semiconductors Product specification PNP switching transistors FEATURES Low current (max. 100 mA) Low voltage (max. 45 V). APPLICATIONS Switching and amplification. DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: BCY58 and BCY59. 3 BCY78; BCY79 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 1 handbook, halfpage 2 3 2 MAM263 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BCY78 BCY79 VCEO collector-emitter voltage BCY78 BCY79 IC Ptot hFE collector current (DC) total power dissipation DC current gain BCY78/VII; BCY79/VII BCY78/VIII; BCY79/VIII BCY78/IX; BCY79/IX BCY78/X fT toff transition frequency turn-off time IC = −10 mA; VCE = −5 V Tamb ≤ 45 °C Tcase ≤ 45 °C IC = −2 mA; VCE = −5 V 120 180 250 380 100 ICon = −100 mA; IBon = −10 mA; IBoff = 10 mA − 220 310 460 630 − 400 MHz ns open base − − − − − −32 −45 −100 340 1 V V mA mW W open emitter − − −32 −45 V V CONDITIONS MIN. MAX. UNIT 1997 Jun 18 2 Philips Semiconductors Product specification PNP switching transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCY78 BCY79 VCEO collector-emitter voltage BCY78 BCY79 VEBO IC ICM IBM Ptot Tstg Tj Tamb...