(PDF) BD131 Datasheet PDF | NXP





BD131 Datasheet PDF

Part Number BD131
Description NPN power transistor
Manufacture NXP
Total Page 8 Pages
PDF Download Download BD131 Datasheet PDF

Features: Datasheet pdf DISCRETE SEMICONDUCTORS DATA SHEET book , halfpage M3D100 BD131 NPN power tra nsistor Product specification Supersed es data of 1997 Mar 04 1999 Apr 12 Phi lips Semiconductors Product specifica tion NPN power transistor FEATURES • High current (max. 3 A) • Low voltag e (max. 45 V). APPLICATIONS • General purpose power applications. DESCRIPTIO N handbook, halfpage BD131 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DES CRIPTION NPN power transistor in a TO- 126; SOT32 plastic package. PNP complem ent: BD132. 3 2 1 1 2 3 Top view MAM254 Fig.1 Simplified outline (TO- 126; SOT32) and symbol. LIMITING VALUE S In accordance with the Absolute Maxim um Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage colle ctor-emitter voltage emitter-base volta ge collector current (DC) peak collecto r current peak base current total power dissipation storage temperature junction temperature operating ambient t.

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BD131 datasheet
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD131
NPN power transistor
Product specification
Supersedes data of 1997 Mar 04
1999 Apr 12

BD131 datasheet
Philips Semiconductors
NPN power transistor
FEATURES
High current (max. 3 A)
Low voltage (max. 45 V).
APPLICATIONS
General purpose power applications.
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complement: BD132.
Product specification
BD131
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector, connected to metal part of
mounting surface
base
handbook, halfpage
2
3
1
1 2 3 Top view
MAM254
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tmb 60 °C
MIN.
65
65
MAX.
70
45
6
3
6
0.5
15
+150
150
+150
UNIT
V
V
V
A
A
A
W
°C
°C
°C
1999 Apr 12
2





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