(PDF) BD139 Datasheet PDF | Motorola Inc





BD139 Datasheet PDF

Part Number BD139
Description Plastic Medium Power Silicon NPN Transistor
Manufacture Motorola Inc
Total Page 4 Pages
PDF Download Download BD139 Datasheet PDF

Features: Datasheet pdf MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD135/D Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifier s and drivers utilizing complementary o r quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are compl ementary with BD 136, 138, 140 BD135 B D137 BD139 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ Î ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ.

Keywords: BD139, datasheet, pdf, Motorola Inc, Plastic, Medium, Power, Silicon, NPN, Transistor, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

BD139 datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Plastic Medium Power Silicon
NPN Transistor
. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi
complementary circuits.
DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc
BD 135, 137, 139 are complementary with BD 136, 138, 140
Order this document
by BD135/D
BD135
BD137
BD139
1.5 AMPERE
POWER TRANSISTORS
NPN SILICON
45, 60, 80 VOLTS
10 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMTÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎHCCECBTTOTTAoohhEmaooopXDDTttÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎeeslllaaeRellilIeeeeteerrllrMtmmmMarrccecDDCaattttrpaaUÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎoooieeAtt–uneeellrrrvvMBrgRR––LriirCaaaccaEBeeeabbteeusRCÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎnumassnooertiirDDsAHdrssvvieeteVttiieeTtASssaaneoRÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVssInnt22trRlNoatoiicc55ppVarnlAGee__taaagoagÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ,,CCttgCelSgiietJJooeaeTuunngJnnEeÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@@uccRCnttRiichooITTStannaÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎACiotTrtitna=ono=IcCg2ACÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2tSe5m5ar__sibCsCeÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎietinctÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSTVVVJyCCEPP,mIICBTBEBDDÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎbsOOOtoglÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSyθθmJJÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCAbolÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBBBBBBTDDDDDDyÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎp111111333333e579579ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ51150aV011011xt10a146846o.2500ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ..l205005055u.00+55TeO1C5ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΖA022S5ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEA7A7ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΖT0Y8PmmÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎW__EWUUVVVAAWWCC_anndddddCa////tWWiiccccc__ÎÎÎÎÎÎÎÎÎtÎÎÎÎÎÎÎÎÎÎÎÎÎttttsCC ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1

BD139 datasheet
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBD135 BD137 BD139
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.03 Adc, IB = 0)
Symbol
BVCEO*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TC = 125_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.005 A, VCE = 2 V)
(IC = 0.15 A, VCE = 2 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.5 A VCE = 2 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.5 Adc, IB = 0.05 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.5 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎx x*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
ICBO
IEBO
hFE*
VCE(sat)*
VBE(on)*
Type
BD 135
BD 137
BD 139
Min
45
60
80
25
40
25
Max UnIt
Vdc
µAdc
0.1
10
10 µAdc
250
0.5 Vdc
1 Vdc
10.0
5.0
2.0 5 ms
1.0
0.5 TJ = 125°C
0.5 ms
dc
0.1 ms
0.1
0.05
0.02
0.01
1
BD135
BD137
BD139
2
5 10 20
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
80
Figure 1. Active–Region Safe Operating Area
2 Motorola Bipolar Power Transistor Device Data





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