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BD175 Dataheets PDF



Part Number BD175
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Datasheet BD175 DatasheetBD175 Datasheet (PDF)

BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter *Collector-Base Voltage : BD175 : BD177 : BD179 : BD175 : BD177 : BD179 Value 45 60 80 45 60 80 5 3 7 30 150 - 65 ~ 150 Units V V V V V V V A A W °C °C VCEO Collector-Emitter Voltage VEBO IC ICP PC TJ TSTG Emitter-Base Vol.

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BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter *Collector-Base Voltage : BD175 : BD177 : BD179 : BD175 : BD177 : BD179 Value 45 60 80 45 60 80 5 3 7 30 150 - 65 ~ 150 Units V V V V V V V A A W °C °C VCEO Collector-Emitter Voltage VEBO IC ICP PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD175 : BD177 : BD179 Collector Cut-off Current : BD175 : BD177 : BD179 Test Condition IC = 100mA, IB = 0 Min. 45 60 80 100 100 100 1 40 15 250 0.8 1.3 3 V V MHz Typ. Max. Units V V V µA µA µA mA ICBO VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 150mA VCE = 2V, IC = 1A IC = 1A, IB = 0.1A VCE = 2V, IC = 1A VCE = 10V, IC = 250mA IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed hFE Classificntion Classification hFE1 * Classification 16: Only BD175 6 40 ~ 100 10 63 ~ 160 16 100 ~ 250 ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD175/177/179 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 VCE = 2V IC = 10 IB hFE, DC CURRENT GAIN 100 1 V BE(sat) V CE(sat) 0.1 10 1 0.01 0.1 1 10 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 40 IC MAX. (Pulsed) 10µ s 35 IC[A], COLLECTOR CURRENT IC MAX. (Continuous) 1m DC PC[W], POWER DISSIPATION 0 10 µs 30 s 25 1 20 15 10 BD175 BD177 BD179 5 0.1 1 10 0 100 0 25 50 o 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 3. Safe Operating Area Figure 4. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD175/177/179 Package Demensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 ±0.30 (0.50) 1.75 ±0.20 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ DISCLAIMER HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ Po.


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