Document
BD175/177/179
BD175/177/179
Medium Power Linear and Switching Applications
• Complement to BD 176/178/180 respectively
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter *Collector-Base Voltage : BD175 : BD177 : BD179 : BD175 : BD177 : BD179 Value 45 60 80 45 60 80 5 3 7 30 150 - 65 ~ 150 Units V V V V V V V A A W °C °C
VCEO
Collector-Emitter Voltage
VEBO IC ICP PC TJ TSTG
Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD175 : BD177 : BD179 Collector Cut-off Current : BD175 : BD177 : BD179 Test Condition IC = 100mA, IB = 0 Min. 45 60 80 100 100 100 1 40 15 250 0.8 1.3 3 V V MHz Typ. Max. Units V V V µA µA µA mA
ICBO
VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 150mA VCE = 2V, IC = 1A IC = 1A, IB = 0.1A VCE = 2V, IC = 1A VCE = 10V, IC = 250mA
IEBO hFE1 hFE2 VCE(sat) VBE(on) fT
Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
hFE Classificntion
Classification hFE1
* Classification 16: Only BD175
6 40 ~ 100
10 63 ~ 160
16 100 ~ 250
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD175/177/179
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
10
VCE = 2V
IC = 10 IB
hFE, DC CURRENT GAIN
100
1
V BE(sat)
V CE(sat)
0.1
10
1 0.01
0.1
1
10
0.01 0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
10
40
IC MAX. (Pulsed)
10µ s
35
IC[A], COLLECTOR CURRENT
IC MAX. (Continuous)
1m
DC
PC[W], POWER DISSIPATION
0 10
µs
30
s
25
1
20
15
10
BD175
BD177
BD179
5
0.1 1 10
0 100 0 25 50
o
75
100
125
150
175
VCE [V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 3. Safe Operating Area
Figure 4. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD175/177/179
Package Demensions
TO-126
±0.10
3.90
8.00 ±0.30
3.25 ±0.20
14.20MAX
ø3.20 ±0.10
11.00
±0.20
(1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10
±0.30
(0.50) 1.75 ±0.20
#1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20]
13.06
16.10
±0.20
0.50 –0.05
+0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™
DISCLAIMER
HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ Po.