CEC3P07
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -37A, RDS(ON) = 10mΩ @VGS = -10...
CEC3P07
P-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
-30V, -37A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15mΩ @VGS = -4.5V.
Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
G S
8 76 5 Bottom View
DFN3*3
4 321
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous
TC = 25 C TC = 100 C TA = 25 C TA = 100 C
ID
-37 -23 -11 -7
Drain Current-Pulsed a
TC = 25 C
TA = 25 C
Maximum Power Dissipation
TC = 25 C
TA = 25 C
Operating and Store Temperature Range
IDM
PD TJ,Tstg
-148 -44 25 2.5 -55 to 150
Units V V A A A A
A
A W W C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case b Thermal Resistance, Junction-to-Ambient b
Symbol RθJc RθJA
Limit 5 50
Units C/W C/W
This is preliminary information on a new product in developmen...
