CEG3456A

CEG3456A N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS(ON) = 38mΩ @VGS = 10V. RDS(ON) = 52mΩ @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. D S S D TSSOP-8 G S S D (1,5,8)D (4)G (2,3,6,7)S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±20 ID 4.8 IDM 20 Maximum Power Dissipation PD 1.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 83 Units V V A A W C Units C/W 2003.July 8-6 http://www.cetsemi.com CEG3456A Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown...