CEG6946A

CEG6946A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.7A, RDS(ON) = 45mΩ @VGS = 4.5V. RDS(ON) = 75mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 6 S2 5 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 20 VGS ±12 ID 3.7 IDM 15 Maximum Power Dissipation PD 1.0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 125 Units V V A A W C Units C/W 2002.July 8 - 10 http://www.cetsemi.com CEG6946A Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Charact...