CEH2312
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 6.2A , RDS(ON) = 33mΩ @VGS = 4....
CEH2312
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
20V, 6.2A , RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 45mΩ @VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable. Lead free product is acquired. TSOP-6 package.
4 5 6
3 2 1
TSOP-6
G(3)
D(1,2,5,6,) S(4)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 20
VGS ±12
ID 6.2 IDM 25
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 62.5
Units V V A A W C
Units C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2006.May http://www.cetsemi.com
CEH2312
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol...
