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CEH3688
N-Channel MOSFET
Description
CEH3688 N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY FEATURES 30V, 3.0A, RDS(ON) = 78mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. RDS(ON) = 155mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 D1 S1 D2 654 1 23 G1 S2 G2 ABSOLUTE...
CET
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CEH3688
N-Channel MOSFET
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