CEK01N6

CEK01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. D GD S TO-92(Ammopack) GD S TO-92(Bulk) G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 650 VGS ±30 Drain Current-Continuous Drain Current-Pulsed a ID 0.3 IDM 1.2 Maximum Power Dissipation PD 3.1 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Leadb Symbol RθJL Limit 40 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 4. 2008.Aug. http://www.cetsemi.com CEK01N6 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage...