CEZ3R03
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 85A, RDS(ON) = 4.0mΩ @VGS = 10V...
CEZ3R03
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
30V, 85A, RDS(ON) = 4.0mΩ @VGS = 10V. RDS(ON) = 6.0mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired. Surface mount Package.
DDDD
GSSS
PR-PACK (5*6)
DD D D 8 7 65
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 30
VGS ±20
ID 85 IDM 340
Maximum Power Dissipation
PD 48
Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperature Range
EAS IAS
TJ,Tstg
125 50
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient b
Symbol RθJC RθJA
Limit 2.6 20
Units V V A A W mJ A C
Units C/W C/W
This is preliminary information on a new product in development now ...
