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CED110P03

CET

P-Channel MOSFET

CED110P03/CEU110P03 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -92A, RDS(ON) =6.0m...


CET

CED110P03

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CED110P03/CEU110P03 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -92A, RDS(ON) =6.0mΩ @VGS = -10V. RDS(ON) =9.0mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C Drain Current-Pulsed a @ TC = 100 C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit VDS -30 VGS ±20 -92 ID -60 IDM -368 73.5 PD 0.59 EAS IAS TJ,Tstg 612.5 35 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.7 62...




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