CED12P15/CEU12P15
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-150V, -12A, RDS(ON) = 0.24...
CED12P15/CEU12P15
P-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
-150V, -12A, RDS(ON) = 0.24Ω @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage(Typ) Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
-150
±20
-12 -48 60
0.48
Single Pulsed Avalanche Energy e
EAS 250
Single Pulsed Avalanche Current e
IAS 10
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2.1 50
Units V V A A W
W/ C mJ A C
Units C/W C/W
This is pre...