CEU12P15

CED12P15/CEU12P15 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -150V, -12A, RDS(ON) = 0.24Ω @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage(Typ) Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD -150 ±20 -12 -48 60 0.48 Single Pulsed Avalanche Energy e EAS 250 Single Pulsed Avalanche Current e IAS 10 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.1 50 Units V V A A W W/ C mJ A C Units C/W C/W This is pre...