CEU02N65D

CED02N65D/CEU02N65D N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.8A, RDS(ON) = 6.9 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 650 ±30 1.8 7.2 35 0.29 Operating and Store Temperature Range TJ,Tstg -55 to 150 Avalanche Current Operating and Store Temperature Range IAS TJ,Tstg 1.4 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.5 50 Units V V A A W W/ C C A C Units C/W C/W 2009.July 6-1 http://...