CED06N7

CED06N7/CEU06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 700V, 5A, RDS(ON) = 2Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 700 VGS ±30 Drain Current-Continuous Drain Current-Pulsed a ID 5 IDM 20 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 107 0.7 Single Pulsed Avalanche Energy e EAS 125 Single Pulsed Avalanche Current e IAS 5 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.4 50 Units V V A A W W/ C mJ A C Units C/W C/W This is preliminary inform...