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CED6086L Dataheets PDF



Part Number CED6086L
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CED6086L DatasheetCED6086L Datasheet (PDF)

CED6086L/CEU6086L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 50.5A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate.

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CED6086L/CEU6086L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 50.5A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e VDS VGS ID IDM PD EAS IAS 60 ±20 50.5 36 202 65 0.43 132 23 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.3 50 Units V V A .


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