CEU6659
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PRELIMINARY
FEATURES
60V , 9A , RDS(ON) = 72...
CEU6659
Dual Enhancement Mode Field Effect
Transistor (N and P Channel)
PRELIMINARY
FEATURES
60V , 9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5V.
-60V , -6A , RDS(ON) = 125mΩ @VGS = 10V. RDS(ON) = 150mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
G1
High power and current handing capability.
Lead-free plating ; RoHS compliant. TO-252-4L package.
S1 G1 S2 G2
D1/D2
CEU SERIES TO-252-4L
D1/D2
G2 S1
S2
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
N-Channel P-Channel
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous e Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
VDS 60 60
VGS ±20 ±20
ID d 9 -6
IDM 32 -24
10.4 PD 0.08
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units V V A A W
W/ C C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 12 50
Units ...