CEM2108E
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 10A, RDS(ON) = 13mΩ @VGS =...
CEM2108E
Dual N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
20V, 10A, RDS(ON) = 13mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 19mΩ @VGS = 2.5V. RDS(ON) = 27mΩ @VGS = 1.8V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package.
D1 D1 D2 D2 8765
SO-8
1
1234 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@TA = 25 C @TA = 70 C
Drain Current-Pulsed a Maximum Power Dissipation@TA = 25 C
@TA = 70 C
VDS VGS ID
IDM PD
20
±12
10
7.8 40 2.0
1.28
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 62.5
Units V V A A A W W C
Units C/W
This is preliminary information on a new product in development now . Specification and data...
