CEP14P20

CEP14P20/CEB14P20 CEF14P20 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP14P20 CEB14P20 CEF14P20 VDSS -200V -200V -200V RDS(ON) 0.36Ω 0.36Ω 0.36Ω ID -13.5A -13.5A -13.5A d @VGS -10V -10V -10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS -200 VGS ±30 ID -13.5 -8.5 IDM e -54 139 PD 1.11 TO-220F -13.5 d -8.5 d -54 d 42 0.33 Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h EAS 273 IAS 13.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characterist...