CEP15P15

CEP15P15/CEB15P15 CEF15P15 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP15P15 CEB15P15 CEF15P15 VDSS -150V -150V -150V RDS(ON) 0.24Ω 0.24Ω 0.24Ω ID -15A -15A -15A d @VGS -10V -10V -10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage(Typ) Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS -150 VGS ±20 ID -15 -9 IDM e - 60 96 PD 0.77 TO-220F -15 d -9d - 60 d 34 0.27 Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h EAS 250 IAS 10 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Paramet...