CEM4307
Dual P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-40V, -5A, RDS(ON) = 44mΩ @VGS =...
CEM4307
Dual P-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
-40V, -5A, RDS(ON) = 44mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package.
D1 D1 D2 D2 8765
SO-8
1
1234 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -40
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -5 IDM -20
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 62.5
Units V V A A W C
Units C/W
This is preliminary information on a new product in development now Details are subject to change without notice .
1
Rev 1. 2012.Apr http://www.cetsemi.com
CEM4307
Electrical Characteristics TA = 2...
