CEP02N65D

CEP02N65D/CEB02N65D CEF02N65D N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP02N65D CEB02N65D CEF02N65D VDSS 650V 650V 650V RDS(ON) 6.9Ω 6.9Ω 6.9Ω ID @VGS 2A 10V 2A 10V 2A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 650 ±30 2 8 41 0.33 2d 8d 27 0.22 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3 62.5 4.5 65 Units V V A A W W/ C C Uni...