CEF07N65A

CEP07N65A/CEB07N65A CEF07N65A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP07N65A CEB07N65A CEF07N65A VDSS 650V 650V 650V RDS(ON) 1.45Ω 1.45Ω 1.45Ω ID @VGS 7A 10V 7A 10V 7A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 650 ±30 7 5 28 150 1 7 5d 28 d 48 0.5 Single Pulsed Avalanche Energy h EAS 150 Single Pulsed Avalanche Current h IAS 5 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case The...