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CEP1710 Dataheets PDF



Part Number CEP1710
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEP1710 DatasheetCEP1710 Datasheet (PDF)

CEP1710/CEB1710 CEF1710 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1710 CEB1710 CEF1710 VDSS 100V 100V 100V RDS(ON) 85mΩ 85mΩ 85mΩ ID 19A 19A 19A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Lim.

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CEP1710/CEB1710 CEF1710 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1710 CEB1710 CEF1710 VDSS 100V 100V 100V RDS(ON) 85mΩ 85mΩ 85mΩ ID 19A 19A 19A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 100 ±20 19 76 62.5 0.5 19 d 76d 32 0.26 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2 62.5 3.9 65 Units V V A A W W/ C C Units C/W C/W Detai.


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